目前主持在研国家自然科学基金1项，甘肃省基金重点项目1项，企业委托项目1项。近几年结题的主持项目包括国家自然科学基金大科学装置预研基金、国家自然科学基金青年基金、科技部国际合作项目子课题，教育部博士点基金，国家重点实验室开放基金、中央高校基本科研业务费等。参与了的项目包括日英战略合作项目、JST CREST、国家863、国家自然基金等课题。

主持项目：

1.国家自然科学基金面上项目，61874051，焦耳热与原子开关导电细丝随机性分布的相关性及焦耳热的原位缺陷态构造研究，2019-01至2022-12

2.甘肃省自然科学基金重点项目，20JR5RA296，原子开关的单根导电细丝通道构筑，2020-11至2022-10

3.国家自然科学基金大科学装置预研基金，U1732136，重离子辐照调控Ta2O5基原子开关阻变层密度及其与开关电压和数据保持性相关性研究，2018-01至2020-12

4.国家自然科学青年基金项目，61404064，低压氧空位离子晶体管的设计及开关机制研究，2014-01至2017-12

5.中船重工委托项目，**探测器***，2020至2022

发表SCI/EI论文30余篇，近5年主要的SCI/EI论文如下：

[1] Wei Xiao, Linbo Shan, Haitao Zhang, Yujun Fu, Yanfei Zhao, Dongliang Yang, Chaohui Jiao, Guangzhi Sun, Qi Wang* and Deyan He, High Photosensitivity Light-Controlled Planar ZnO Artificial Synapse for Neuromorphic Computing, Nanoscale13, 2502, 2021

[2]Dongliang Yang, Huiyong Yang, Xiangyu Guo, Haitao Zhang, Chaohui Jiao, Wei Xiao, Pengqian Guo, Qi Wang*, Deyan He, Robust Polyethylenimine Electrolyte for High Performance and Thermally-Stable Atomic Switch Memristors, Advanced Functional Materials30, 2004514, 2020

[3] Xiangyu Guo, Qi Wang*, Xiaowei Lv, Huiyong Yang, Kai Sun, Dongliang Yang, Haitao Zhang, Tsuyoshi Hasegawa, Deyan He, SiO2/Ta2O5heterojunction ECM memristor: Physical nature of their low voltage operation with high stability and uniformity, Nanoscale12, 4320, 2020.

[4] Huiyong Yang, Zheng Wang, Xiangyu Guo, Hao Su, Kai Sun, Dongliang Yang, Wei Xiao, Qi Wang*, Deyan He, Controlled Growth of Fine Multifilaments in Polymer-Based Memristive Devices Via the Conduction Control, ACS Appl. Mater. Interfaces12, 34370, 2020.

[5]Han Xu,Qi Wang*,Yaodong Ma,Honggang Dang,Pengqian Guo,Huan Yang,Deyan He, An atomic switch using oxygenated amorphous carbon as solid electrolyte, Journal of Physics D: Applied Physics, 52, 07LT01, 2019

[6]YongfuWang,KaixiongGao,BinZhang,QiWang*,JunyanZhang*, Structure effects of sp2 -rich carbon films under super-low friction contact, Carbon,137(2018), pp.49-56

[7]Qi Wang*,Yaomi Itoh , Tohru Tsuruoka,Masakazu Aono,Deyan He, Tsuyoshi Hasegawa, Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current, Solid State Ionics, 328, 30, 2018

[8]Qi Wang*and Deyan He*, Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device, Scientific Reports7,822 2017

[9]Qi Wang*, Yaomi Itoh Tohru Tsuruoka, Shintaro Ohtsuka, Tomohiro Shimizu, Shoso Shingubara, Tsuyoshi Hasegawa*, and Masakazu Aono, Dynamic moderation of an electric field using a SiO2 switching layer in TaOx-based ReRAM, Phys. Status Solidi RRL9, 166-170, 2015.

[10] Qi Wang*, Yaomi Itoh Tohru Tsuruoka, Masakazu Aono and Tsuyoshi Hasegawa*, Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch, Advanced Materials27, 6029, 2015.